A master’s thesis defense was held at the College of Electronics Engineering, Department of Electronic Engineering, on Wednesday, January 29, 2025, by the student Yathrib Waleed Qasim. The thesis, titled:
“Impact of High-k Dielectric Materials on Semiconductor Devices Performance,”
investigates the effects of high-k dielectric materials on the performance of semiconductor devices.
The Assistant President of the University for Scientific Affairs, Prof. Dr. Jaafar Ramadan Mohammed, attended part of the discussion.
Thesis Overview
The research focuses on the miniaturization of MOSFETs, the breakdown of the gate dielectric layer, and the increase in leakage currents.
To address these challenges, the thesis proposes a novel approach by utilizing silicon-based MOSFET structures incorporating high-k dielectric materials in their gates. These materials serve as effective alternatives to traditional SiO₂ gate dielectrics, improving device performance and reliability.
The study aims to:
• Investigate the impact of high-k dielectric materials on MOSFET performance.
• Enhance the electrical characteristics of MOSFET devices across various nanotechnology nodes.
• Optimize the geometric structure of the MOSFET gate to reduce fringe fields caused by transistor scaling.
• Utilize materials with a high dielectric constant to improve insulation properties.
The examination committee consisted of the following members:
1. Asst. Prof. Dr. Ahmed Mohammed Salama – University of Ninevah, College of Electronics Engineering (Chair).
2. Asst. Prof. Dr. Omar Ibrahim Ahmed – Northern Technical University, College of Computer and Artificial Intelligence Engineering (Member).
3. Lecturer Dr. Omar Badr Mohammed – University of Ninevah, College of Electronics Engineering (Member).
4. Prof. Dr. Qais Thanon Najm – University of Ninevah, College of Electronics Engineering (Member & Supervisor).
