Master’s Thesis at the College of Electronics Engineering, University of Ninevah, Explores MOSFET Development for Radio-Frequency Applications

The College of Electronics Engineering at the University of Ninevah held a Master’s thesis defense on Tuesday morning, 8 September 2026, for student Nadia Khalid Mustafa. The thesis was entitled:

“Simulation-Based Investigation of Channel Parameters Effects on RF Performance in DG MOSFET”

“A Simulation-Based Study of the Effects of Channel Parameters on DG-MOSFET Performance for Radio-Frequency Applications”

The thesis aimed to investigate and develop advanced semiconductor technologies at the nanoscale to achieve high operational efficiency and low power consumption for radio-frequency (RF) applications.

The study included an engineering and analytical simulation using Silvaco TCAD to optimize the performance of MOSFET transistors by employing ferroelectric materials and double-gate DG-MOSFET structures, with the aim of mitigating short-channel effects (SCEs) and improving the electrical and operational characteristics of the devices.

The study also examined the effects of gate dielectric thickness and the ferroelectric material Si:HfO₂ on both DC and AC electrical characteristics, with the aim of reducing leakage currents and improving the ON/OFF current ratio (Ion/Ioff) and threshold voltage (Vth), in addition to enhancing the cut-off frequency (fT) and transconductance (gm), thereby improving the efficiency of devices operating within the radio-frequency range.

The research further compared the performance of single-gate SG-MOSFET and double-gate DG-MOSFET structures to determine the optimal design for nanoscale devices.

The examination committee consisted of:

  • Professor Dr. Khalid Khalil Mohammed — Chair.
  • Assistant Professor Dr. Harith Ahmed Mohammed — Member.
  • Assistant Professor Dr. Safwan Hafeez Younis — Member.
  • Professor Dr. Qais Dhunoon Najm — Member and Supervisor.

The defense comes as part of the College of Electronics Engineering’s commitment to advancing scientific research in the fields of nanoelectronics, semiconductor technologies, and radio-frequency technologies, while supporting engineering research that contributes to keeping pace with the latest developments in electronic device technologies.